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<p>Cadmium Telluride (CdTe) solar cells are among the most promising thin-film photovoltaic technologies due to their ideal bandgap and strong light absorption. However, their efficiency is often constrained by recombination losses and non-optimal window or buffer layer interfaces. This study investigates the potential of Magnesium Zinc Oxide (MZO) as an alternative window layer to address these limitations, using Solar Cell Capacitance Simulator in One Dimension (SCAPS-1D) simulations. Three device configurations are examined: a baseline cell, the baseline with MZO as the window layer, and the baseline without the Cadmium Sulfide (CdS) buffer layer. The reference structure achieves 15.53% efficiency. Incorporating a 150-nm MZO layer with a carrier concentration of 10<sup>14</sup>&#xa0;cm<sup>−3</sup> improves the efficiency to 17.09%, while removing the CdS layer and optimizing the MZO layer to 125&#xa0;nm with a carrier concentration of 10<sup>18</sup> cm<sup>−3</sup> further increases the efficiency to 19.38%. These results confirm MZO’s effectiveness in enhancing CdTe solar cell performance.</p> Graphical abstract <p></p>

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Efficiency enhancement of CdTe solar cells using magnesium zinc oxide window layer with and without CdS: A SCAPS-1D simulation study

  • 期刊论文

  • 发表日期：

    2025年8月8日

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  • Nurul Nabilah Mohd Yusheiry,
  • Yoganash Putthisigamany,
  • Norasikin Ahmad Ludin,
  • Puvaneswaran Chelvanathan,
  • Kazi Sajedur Rahman

摘要

Cadmium Telluride (CdTe) solar cells are among the most promising thin-film photovoltaic technologies due to their ideal bandgap and strong light absorption. However, their efficiency is often constrained by recombination losses and non-optimal window or buffer layer interfaces. This study investigates the potential of Magnesium Zinc Oxide (MZO) as an alternative window layer to address these limitations, using Solar Cell Capacitance Simulator in One Dimension (SCAPS-1D) simulations. Three device configurations are examined: a baseline cell, the baseline with MZO as the window layer, and the baseline without the Cadmium Sulfide (CdS) buffer layer. The reference structure achieves 15.53% efficiency. Incorporating a 150-nm MZO layer with a carrier concentration of 1014 cm−3 improves the efficiency to 17.09%, while removing the CdS layer and optimizing the MZO layer to 125 nm with a carrier concentration of 1018 cm−3 further increases the efficiency to 19.38%. These results confirm MZO’s effectiveness in enhancing CdTe solar cell performance.

Graphical abstract