Scholarlink

<p>A tetragonal nanostructured Cu<sub>2</sub>SnS<sub>3</sub> thin film was developed as a model system, achieving a photoconversion efficiency of 1.29%. The Cu<sub>2</sub>SnS<sub>3</sub> films were synthesized via arrested precipitation method and subsequently sulfurized at 575&#xa0;°C for different time. The characterizations of the prepared samples were performed to analyze and verify their properties feasible for solar cell application. Ultra-violet–visible–near infrared (UV–Vis–NIR) absorption spectroscopic measurement of the photoanode revealed a decrease in bandgap energy with increasing sulfurization time. The compact nanostructure at the surface and bulk was observed through surface and cross-sectional FE-SEM micrographs, whereas the X-ray photoelectron spectroscopic (XPS) measurement verified the compositional and chemical structure with precise stoichiometry of Cu<sub>2</sub>SnS<sub>3</sub> material. The highest photoconversion efficiency (1.29%) was obtained for the Cu<sub>2</sub>SnS<sub>3</sub> thin film sulfurized at 575&#xa0;°C for 20&#xa0;min. This improved performance may be attributed to the fast charge transportation originated from the low equivalent series resistance (Rₛ) and reduced grain boundary.</p> Graphical abstract <p>Enhanced performance (1.29% PEC) via controlled sulfurization-induced crystallite growth and bandgap narrowing</p> <p></p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Enhanced performance of arrested precipitation assembled Cu2SnS3 thin films with controlled sulfurization for solar cell application

  • 期刊论文

  • 发表日期：

    2025年11月12日

查看全文
  • Satish M. Karape,
  • Dnyaneshwar M. Sirsat,
  • Shivaji S. Jadhav,
  • Girish S. Gund,
  • Sagar T. Sankpal

摘要

A tetragonal nanostructured Cu2SnS3 thin film was developed as a model system, achieving a photoconversion efficiency of 1.29%. The Cu2SnS3 films were synthesized via arrested precipitation method and subsequently sulfurized at 575 °C for different time. The characterizations of the prepared samples were performed to analyze and verify their properties feasible for solar cell application. Ultra-violet–visible–near infrared (UV–Vis–NIR) absorption spectroscopic measurement of the photoanode revealed a decrease in bandgap energy with increasing sulfurization time. The compact nanostructure at the surface and bulk was observed through surface and cross-sectional FE-SEM micrographs, whereas the X-ray photoelectron spectroscopic (XPS) measurement verified the compositional and chemical structure with precise stoichiometry of Cu2SnS3 material. The highest photoconversion efficiency (1.29%) was obtained for the Cu2SnS3 thin film sulfurized at 575 °C for 20 min. This improved performance may be attributed to the fast charge transportation originated from the low equivalent series resistance (Rₛ) and reduced grain boundary.

Graphical abstract

Enhanced performance (1.29% PEC) via controlled sulfurization-induced crystallite growth and bandgap narrowing