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<p>ZnO thin films were synthesized via chemical bath technique using room temperature&#xa0;and without any complexing agent. The growth mechanism was determined to be through hydroxide nuclei through the analysis of a solution composed of zinc acetate and sodium hydroxide. The pH was modified to a highly alkaline zone&#xa0;to obtain the species necessary for the growth. The synthesized samples presented a highly crystalline hexagonal structure with no need to apply any subsequent thermal process. SEM analysis showed that the ZnO obtained had a nanowire-type morphology that was randomly interlinked. XPS analysis revealed that the zinc was bonded to oxygen in the form of ZnO. Additionally, there was extra oxygen present from both the substrate and the zinc acetate used as a reagent. The band gap energy of the samples was stipulated between 3 and 3.15&#xa0;eV, which makes them candidates to be applied in optoelectronic and photovoltaic devices.</p> Graphical abstract <p></p>

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Room temperature chemical deposition of ZnO: Role of alkaline pH in the formation of highly crystalline films without complexing agent

  • 期刊论文

  • 发表日期：

    2025年6月18日

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  • I. J. Gonzalez-Chan,
  • J. Novelo-Uc,
  • M. A. Rosado-Mendoza,
  • J. S. Novelo-Castilla

摘要

ZnO thin films were synthesized via chemical bath technique using room temperature and without any complexing agent. The growth mechanism was determined to be through hydroxide nuclei through the analysis of a solution composed of zinc acetate and sodium hydroxide. The pH was modified to a highly alkaline zone to obtain the species necessary for the growth. The synthesized samples presented a highly crystalline hexagonal structure with no need to apply any subsequent thermal process. SEM analysis showed that the ZnO obtained had a nanowire-type morphology that was randomly interlinked. XPS analysis revealed that the zinc was bonded to oxygen in the form of ZnO. Additionally, there was extra oxygen present from both the substrate and the zinc acetate used as a reagent. The band gap energy of the samples was stipulated between 3 and 3.15 eV, which makes them candidates to be applied in optoelectronic and photovoltaic devices.

Graphical abstract