Machine learning on simulation study of UV photodetector parameter based on MgZnO thin-film transistor
摘要
MgxZn1-xO (x = 20% and 1-x = 80%) TFT-based UV photodetector was simulated using TCAD tool. The performance of simulated UV photodetector was calculated using spectral response measurements. Responsivity of photodetectors was 0.28 A/W, 0.30 A/W, 0.32 A/W, and .32 A/W with corresponding External quantum efficiency of 351%, 140%,109%, and 109%. respectively. The changes in detectivity and noise equivalent power are also calculated. These TFT-based UV photodetector results show excellent responsivity, photosensitivity making them compatible for optoelectronic devices. Also, this UV photodetector parameter prediction is done using Linear Regression and Neural Network machine leaning model. The parameters R2 and RMSE for linear regression model are .85 and .144 and for Neural Network model .96 and .030 calculated. Observed results show that Neural Network model gives better results as compared to linear regression model.
Graphical abstract