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<p>2D layered molybdenum oxide has attracted significant research interest due to its tuneable bandgap and diverse structural, chemical, electrical, and optical properties influenced by growth parameters and synthesis techniques. In this study, the effects of reduction annealing on the structural and electrical properties of few-layer MoO₃ thin films, deposited on Si/SiO₂ substrates via pulsed laser deposition, were investigated. X-ray diffraction revealed nanocrystalline structures with a preferred (020) orientation, reduction annealing produced&#xa0;highly crystalline orthorhombic α-MoO₃ with reduced unit cell volume. FESEM/EDS provided detailed analyses of microstructures and elemental compositions. Raman spectroscopy confirmed the orthorhombic structure, with characteristic peaks at 667, 820, and 995&#xa0;cm⁻<sup>1</sup>, corresponding to O–Mo–O and Mo = O vibrational modes. UV–Vis spectroscopy showed a bandgap reduction from 3.3 to 3.07&#xa0;eV, enhancing conductivity through oxygen vacancies. Preliminary FET measurements demonstrated that the samples retained their semiconducting behavior, with I<sub>DS</sub> vs V<sub>DS</sub> characteristics showing effective gate modulation.</p> Graphical abstract <p></p>

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Effect of reduction annealing on the structural and electrical properties of α-MoO3 thin films

  • 期刊论文

  • 发表日期：

    2025年5月8日

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  • Sandipani Ghosh,
  • Fahad Munshe,
  • Md. Zulkernain Haider,
  • Kartik C. Ghosh

摘要

2D layered molybdenum oxide has attracted significant research interest due to its tuneable bandgap and diverse structural, chemical, electrical, and optical properties influenced by growth parameters and synthesis techniques. In this study, the effects of reduction annealing on the structural and electrical properties of few-layer MoO₃ thin films, deposited on Si/SiO₂ substrates via pulsed laser deposition, were investigated. X-ray diffraction revealed nanocrystalline structures with a preferred (020) orientation, reduction annealing produced highly crystalline orthorhombic α-MoO₃ with reduced unit cell volume. FESEM/EDS provided detailed analyses of microstructures and elemental compositions. Raman spectroscopy confirmed the orthorhombic structure, with characteristic peaks at 667, 820, and 995 cm⁻1, corresponding to O–Mo–O and Mo = O vibrational modes. UV–Vis spectroscopy showed a bandgap reduction from 3.3 to 3.07 eV, enhancing conductivity through oxygen vacancies. Preliminary FET measurements demonstrated that the samples retained their semiconducting behavior, with IDS vs VDS characteristics showing effective gate modulation.

Graphical abstract