<p>We investigate the contact resistance of twisted bilayer graphene devices encapsulated by hexagonal boron nitride (hBN). Encapsulation ensures an atomically flat interface that supports emerging new states in twistronics, but it also necessitates an etch step to expose the graphene for electrical contacts. The dry-etch process by sulfur hexafluoride (SF₆) etches hBN but stops on graphene. In our case, graphene only serves as an imperfect etch mask, resulting in a porous structure in graphene after the SF₆ etch, possibly due to inadvertent residual oxygen during the etch process. We investigate electrical contacts to graphene surfaces exposed by this process. Etched pores expose edges which participate in the contact, which combined with fluorination of the graphene surface, provide variables for optimizing contact resistance.</p> Graphical abstract <p></p>