Scholarlink

<p>In order to maximize photovoltaic efficiency in the temperature range of 270–450&#xa0;K, this paper theoretically investigates the temperature dependence and the effect of the back surface field (BSF) layer on the performance of a p+/n+ single-junction solar cell model based on Ga<sub>x</sub>In<sub>1−x</sub>P. By adding a back surface field (BSF) layer, the charge carrier’s recombination velocity was successfully decreased, increasing the short-circuit current density (Jsc). The multiple BSF layers in the design produced better Jsc while keeping the open-circuit voltage (Voc) constant. It was the gallium composition that was used to figure out the optical, electrical, and physical properties of Ga<sub>x</sub>In<sub>1−x</sub>P. Under typical test conditions (AM1.5, 300&#xa0;K), the optimized single-junction Ga<sub>x</sub>In<sub>1−x</sub>P solar cell structure, with a bandgap of 1.9&#xa0;eV, showed a high conversion efficiency of 22.28% with short-circuit current density Jsc = 17.24&#xa0;mA/cm<sup>2</sup> and open-circuit voltage Voc = 1.492&#xa0;V.</p> Graphical abstract <p></p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Impact of temperature on the performance of efficient GaInP single-junction solar cells with double back surface field

  • 期刊论文

  • 发表日期：

    2025年4月25日

查看全文
  • Ramesh Kumar,
  • Praveen Kumar Jain

摘要

In order to maximize photovoltaic efficiency in the temperature range of 270–450 K, this paper theoretically investigates the temperature dependence and the effect of the back surface field (BSF) layer on the performance of a p+/n+ single-junction solar cell model based on GaxIn1−xP. By adding a back surface field (BSF) layer, the charge carrier’s recombination velocity was successfully decreased, increasing the short-circuit current density (Jsc). The multiple BSF layers in the design produced better Jsc while keeping the open-circuit voltage (Voc) constant. It was the gallium composition that was used to figure out the optical, electrical, and physical properties of GaxIn1−xP. Under typical test conditions (AM1.5, 300 K), the optimized single-junction GaxIn1−xP solar cell structure, with a bandgap of 1.9 eV, showed a high conversion efficiency of 22.28% with short-circuit current density Jsc = 17.24 mA/cm2 and open-circuit voltage Voc = 1.492 V.

Graphical abstract