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<p>Zinc telluride has shown promising properties for Ovonic Threshold Switching selector devices in phase-change memory arrays. We have recently shown that thin films of ZnTe deposited by Atomic Layer Deposition on platinum also exhibit non-volatile memory behavior, opening a path for OTS and PCM integration with this single material. Here we present physical and electrical characterization of such ZnTe films on different substrates. XRD results show that the ZnTe films deposited on GaAs and sapphire are polycrystalline while that on SiO<sub>2</sub> is amorphous. The electrical resistivity drops by 5–6 orders of magnitude between room temperature and 688&#xa0;K and shows a crystallization temperature between ~ 550&#xa0;K and ~ 630&#xa0;K. Hall measurements yielded a p-type behavior of the Hall coefficient versus magnetic field between room temperature and 556&#xa0;K, with mobility ~ ranging non-monotonously from ~ 30 cm<sup>2</sup>/V.s to ~ 170 cm<sup>2</sup>/V.s.</p> Graphical abstract <p></p>

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Physical and electrical characterization of zinc telluride thin films deposited by atomic layer deposition

  • 期刊论文

  • 发表日期：

    2025年4月16日

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  • Habeeb Mousa,
  • Saidjafarzoda Ilhom,
  • Helena Silva,
  • Guy Wicker,
  • Oleg Maksimov,
  • Katherine Hansen,
  • Harish Bhandari

摘要

Zinc telluride has shown promising properties for Ovonic Threshold Switching selector devices in phase-change memory arrays. We have recently shown that thin films of ZnTe deposited by Atomic Layer Deposition on platinum also exhibit non-volatile memory behavior, opening a path for OTS and PCM integration with this single material. Here we present physical and electrical characterization of such ZnTe films on different substrates. XRD results show that the ZnTe films deposited on GaAs and sapphire are polycrystalline while that on SiO2 is amorphous. The electrical resistivity drops by 5–6 orders of magnitude between room temperature and 688 K and shows a crystallization temperature between ~ 550 K and ~ 630 K. Hall measurements yielded a p-type behavior of the Hall coefficient versus magnetic field between room temperature and 556 K, with mobility ~ ranging non-monotonously from ~ 30 cm2/V.s to ~ 170 cm2/V.s.

Graphical abstract