<p>The reflection of light energy incident on the upper surface of the solar cell significantly lowers its efficiency. To offset the effects of reflection, an antireflection coating has been demonstrated from aluminum oxide (Al₂O₃) and copper-doped zinc sulphide (ZnS:Cu) thin films. Thus, in this paper, we investigate the effect of thickness and sputtering power on reflectance of Al₂O₃ and ZnS:Cu thin films. The deposition of ZnS:Cu and Al₂O₃ was carried out by R.F. and D.C. sputtering, respectively. Power values of 70 W to 140 W were used for 5 to 30&#xa0;min. The lowest reflectance of single-layer ZnS:Cu and Al₂O₃ in the visible region was 10.6% and 8.4% respectively. The formulation of double-layer thin films reduced reflectance both in the ultraviolet and visible spectrum. The Al₂O₃/ZnS:Cu nanofilms attained the lowest reflectance of 2.18% at <i>λ</i> = 445&#xa0;nm. The formation of small grain sizes with a rough film surface enhanced light scattering and reduced reflection. The crystallite size <i>D</i>_<i>hkl</i>, increased from 14.23 to 18.88&#xa0;nm with an increase in sputtering power from 70 to 140 W. Therefore, the results highlight the potential use of Al₂O₃/ZnS:Cu nanostructure for enhanced antireflection for solar cells.</p> Graphical Abstract <p>(a) Edwards 306 magnetron sputtering machine used for the deposition of copper-doped zinc sulphide and aluminium oxide thin films, (b) Double layer structure of Al2O3/ZnS:Cu thin films deposited onto indium tin oxide</p> <p></p>