<p>Low-temperature plasma (LTP) ion sources such as Bernas-type sources are often used for ion implantation. Overall there are two distinct, but coupled, regions of such sources: (1) the plasma chamber and (2) the beam extraction region. Shaping beam characteristics and understanding how the plasma parameters affect beam quality are key aspects of implantation sources. We outline capabilities and workflows that integrate accurate plasma models with beam formation and extraction in LTP sources using the plasma modeling framework VSim. We present results comparing two Bernas-type sources with an argon gas. We develop models of plasma formation based on self-consistent electromagnetic field, particle, and plasma chemistry models. We employ a number of numerical techniques to improve computational performance so that simulations can be done in a reasonable amount of time. We compute and compare beam quantities such as the transverse emittance and beam currents for our test cases. Numerical simulation of LTP ion sources can be useful for ion implantation studies and engineering developments, providing insights into beam quality and the effectiveness of parameter optimization.</p> Graphic abstract <p>D-Pace, Inc. Bernas ion source in the laboratory and in the computer</p>