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<p>Sputter depositions of Sb<sub>2</sub>Te<sub>3</sub> and Bi<sub>2</sub>Te<sub>3</sub> thin films are optimized for applications that require photolithographic patterning, such as antenna-coupled thermoelectric THz/mm-wave detection and radiant heat energy harvesting. Sputtered films of both materials require thermal activation treatment at temperatures exceeding 175&#xa0;°C, which must be done after patterning. We report the results of a new optimization study with sputtering on unheated substrates followed by annealing. Our two-level full-factorial approach assumes three factors, namely RF power during sputtering, deposition time, and subsequent annealing temperature. Infrared reflectance spectroscopy, profilometry, and resistivity measurements show that annealing thickens the films, increases their refractive indices, and decreases resistivity by increasing the carrier relaxation time. Seebeck coefficients and lift-off patterning are significantly improved over previous results with films deposited on heated substrates. Examples of fabricated mm-wave detector devices, their simulation-guided design, and initial characterization results are presented.</p> Graphical abstract <p></p>

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Optimizing sputter deposition of Bi2Te3 and Sb2Te3 for photolithographic device fabrication

  • 期刊论文

  • 发表日期：

    2025年3月11日

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  • Rumana Zahir,
  • Tanvir Hasan,
  • Warut Labnongsaeng,
  • Kalpathy Sundaram,
  • Masahiro Ishigami,
  • F. Javier Gonzalez,
  • Robert E. Peale

摘要

Sputter depositions of Sb2Te3 and Bi2Te3 thin films are optimized for applications that require photolithographic patterning, such as antenna-coupled thermoelectric THz/mm-wave detection and radiant heat energy harvesting. Sputtered films of both materials require thermal activation treatment at temperatures exceeding 175 °C, which must be done after patterning. We report the results of a new optimization study with sputtering on unheated substrates followed by annealing. Our two-level full-factorial approach assumes three factors, namely RF power during sputtering, deposition time, and subsequent annealing temperature. Infrared reflectance spectroscopy, profilometry, and resistivity measurements show that annealing thickens the films, increases their refractive indices, and decreases resistivity by increasing the carrier relaxation time. Seebeck coefficients and lift-off patterning are significantly improved over previous results with films deposited on heated substrates. Examples of fabricated mm-wave detector devices, their simulation-guided design, and initial characterization results are presented.

Graphical abstract