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<p>To utilize GaN in power devices, a technology to form a p-type conductive layer by implant Mg ions is imperative. However, GaN decomposes at high temperatures under atmospheric pressure, posing challenges in activating Mg ions through annealing. Consequently, an AlN protective film was formed to protect the ion-implanted layer. However, the protective film necessitates additional steps, including protective film removal and electrode fabrication, to validate the electrical properties of the ion-implanted layer. We proposed a method to measure the electrical properties of multilayer semiconductor films using THz time-domain spectroscopic ellipsometry (THz-TDSE) without electrodes. The electrical properties of the ion-implanted layer of a sample with implanted Mg ions were measured using THz-TDSE. We obtained accurate measurements without AlN protective film removal. Analysis of the box-profiled Mg ion-implanted layer revealed an activation rate of approximately 1.5% at an annealing temperature of 1300&#xa0;°C, with Mg implanted at concentrations of approximately 1 × 10<sup>17</sup>&#xa0;cm<sup>−3</sup>.</p> Graphical abstract <p></p>

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Noncontact and nondestructive measurements of electrical properties for Mg ion-implanted layers on GaN single crystals using THz time-domain spectroscopic ellipsometry

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年2月24日

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  • Dingding Wang,
  • Takashi Fujii,
  • Momoko Deura,
  • Toshiyuki Iwamoto,
  • Ryuichi Sugie,
  • Atsushi Suyama,
  • Hitoshi Kawanowa,
  • Tsutomu Araki

摘要

To utilize GaN in power devices, a technology to form a p-type conductive layer by implant Mg ions is imperative. However, GaN decomposes at high temperatures under atmospheric pressure, posing challenges in activating Mg ions through annealing. Consequently, an AlN protective film was formed to protect the ion-implanted layer. However, the protective film necessitates additional steps, including protective film removal and electrode fabrication, to validate the electrical properties of the ion-implanted layer. We proposed a method to measure the electrical properties of multilayer semiconductor films using THz time-domain spectroscopic ellipsometry (THz-TDSE) without electrodes. The electrical properties of the ion-implanted layer of a sample with implanted Mg ions were measured using THz-TDSE. We obtained accurate measurements without AlN protective film removal. Analysis of the box-profiled Mg ion-implanted layer revealed an activation rate of approximately 1.5% at an annealing temperature of 1300 °C, with Mg implanted at concentrations of approximately 1 × 1017 cm−3.

Graphical abstract