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<p>Trace metallic contamination is a critical concern for CIS devices, causing image quality and sensor performance issues&#xa0;(Teranishi et al. in Sensors 18(7):2358, 2018, <a href="https://doi.org/10.3390/s18072358">https://doi.org/10.3390/s18072358</a>). To better characterize metal contamination in ion implanters, Axcelis has invested in a&#xa0;VPD ICP-MS (vapor phase decomposition, inductively coupled plasma mass spectrometry) for both surface and bulk detection. This system is the industry standard for surface detection of trace metals due to its lack of introduced contamination, high sensitivity, and low detection limits from 1E6 at/cm<sup>2</sup>&#xa0;to 1E9 at/cm<sup>2</sup>, depending on the element. Bulk silicon etch (BSE) uses HF vapor and ozone gas to etch the implanted silicon wafer to a controlled depth allowing the detection of energetic contaminants (Ichikawa in Analysis of metallic impurities in Si wafers using fully automated VPD-ICP-MS. PerkinElmer Application Note, 2021, <a href="https://resources.perkinelmer.com/lab-solutions/resources/docs/app-analysis-of-metallic-impurities-in-si-wafers-using-fully-automated-vpd-icp-ms-224086.pdf">https://resources.perkinelmer.com/lab-solutions/resources/docs/app-analysis-of-metallic-impurities-in-si-wafers-using-fully-automated-vpd-icp-ms-224086.pdf</a>). This paper presents BSE verification using metal-implanted calibration wafers and&#xa0;experiments performed with BSE ICP-MS to characterize the use of Boost Technology™&#xa0;in the Purion XEmax high energy implanter, designed to meet the challenges of the evolving CIS market (Satoh et al. in MRS Adv 7:1490, 2022).</p> Graphical abstract <p></p>

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Energetic metals characterization of Purion XEmax with and without Boost Technology™ using VPD ICP-MS

  • 期刊论文

  • 发表日期：

    2025年2月18日

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  • Olivia Campbell,
  • Wilhelm Platow,
  • Leonard Rubin,
  • Vladimir Romanov,
  • Christina Sohl

摘要

Trace metallic contamination is a critical concern for CIS devices, causing image quality and sensor performance issues (Teranishi et al. in Sensors 18(7):2358, 2018, https://doi.org/10.3390/s18072358). To better characterize metal contamination in ion implanters, Axcelis has invested in a VPD ICP-MS (vapor phase decomposition, inductively coupled plasma mass spectrometry) for both surface and bulk detection. This system is the industry standard for surface detection of trace metals due to its lack of introduced contamination, high sensitivity, and low detection limits from 1E6 at/cm2 to 1E9 at/cm2, depending on the element. Bulk silicon etch (BSE) uses HF vapor and ozone gas to etch the implanted silicon wafer to a controlled depth allowing the detection of energetic contaminants (Ichikawa in Analysis of metallic impurities in Si wafers using fully automated VPD-ICP-MS. PerkinElmer Application Note, 2021, https://resources.perkinelmer.com/lab-solutions/resources/docs/app-analysis-of-metallic-impurities-in-si-wafers-using-fully-automated-vpd-icp-ms-224086.pdf). This paper presents BSE verification using metal-implanted calibration wafers and experiments performed with BSE ICP-MS to characterize the use of Boost Technology™ in the Purion XEmax high energy implanter, designed to meet the challenges of the evolving CIS market (Satoh et al. in MRS Adv 7:1490, 2022).

Graphical abstract