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<p>This study explores the synthesis, characterisation, and changes in the electrical properties of co-sputtered ZnO:Zn films for adaptive oxide devices. The films were synthesised using co-sputtering, with ZnO deposited at 150&#xa0;W RF and Zn at 10, 15, and 20&#xa0;W DC. X-Ray Diffraction (XRD) showed structural changes, indicating interstitial zinc incorporation in the ZnO lattice. Hall effect measurements revealed carrier concentration and mobility of the samples, while Frequency Response Analysis (FRA) examined the electrical conductivity and stability across 100&#xa0;Hz–20&#xa0;MHz. These properties make ZnO films promising for adaptive devices and applications such as memristors, sensors, thin-film transistors, optoelectronic devices, and conductive coatings.</p> Graphical abstract <p></p>

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Electrical properties of co-sputtered ZnO:Zn thin films for adaptive oxide devices

  • 期刊论文

  • 发表日期：

    2025年2月11日

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  • Karen A. Neri-Espinoza,
  • Miguel A. Domínguez-Crespo,
  • José A. Andraca-Adame,
  • Francisco Gutiérrez-Galicia,
  • Lucía I. Juárez-Amador,
  • Ramón Peña-Sierra

摘要

This study explores the synthesis, characterisation, and changes in the electrical properties of co-sputtered ZnO:Zn films for adaptive oxide devices. The films were synthesised using co-sputtering, with ZnO deposited at 150 W RF and Zn at 10, 15, and 20 W DC. X-Ray Diffraction (XRD) showed structural changes, indicating interstitial zinc incorporation in the ZnO lattice. Hall effect measurements revealed carrier concentration and mobility of the samples, while Frequency Response Analysis (FRA) examined the electrical conductivity and stability across 100 Hz–20 MHz. These properties make ZnO films promising for adaptive devices and applications such as memristors, sensors, thin-film transistors, optoelectronic devices, and conductive coatings.

Graphical abstract