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<p>An in situ XRD system for channeling implantation has been developed. This system automatically corrects the angle between the wafer's off-axis angle and the ion beam for each wafer. The off-axis angle of the wafer is determined using a XRD device integrated with the wafer aligner. The measurement result is used for feedforward control to the implantation angle. As a result, ion implantation is maintained with an angular deviation within ± 0.2 degree.</p> Graphical abstract <p>To achieve channeling implantation ± 0.2 degree of SiC wafers off-angle, a XRD device will be mounted on the wafer aligner to implement feedforward control for each wafer. SIMS result showed the ability to control the channeling implantation angle within target angle.</p> <p></p>

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IMPHEAT-II:In situ XRD system, enhancement of implantation angle accuracy through per-wafer measurement of off-axis angle for channeling implantation

  • 期刊论文

  • 发表日期：

    2025年2月10日

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  • Y. Hirai,
  • H. Ide,
  • T. Sato,
  • S. Wang,
  • T. Taniguchi,
  • R. Wada,
  • N. Takahashi,
  • S. Hamada,
  • A. Nakanishi,
  • S. Inoue,
  • K. Tanaka,
  • T. Kuroi,
  • W. Zhao

摘要

An in situ XRD system for channeling implantation has been developed. This system automatically corrects the angle between the wafer's off-axis angle and the ion beam for each wafer. The off-axis angle of the wafer is determined using a XRD device integrated with the wafer aligner. The measurement result is used for feedforward control to the implantation angle. As a result, ion implantation is maintained with an angular deviation within ± 0.2 degree.

Graphical abstract

To achieve channeling implantation ± 0.2 degree of SiC wafers off-angle, a XRD device will be mounted on the wafer aligner to implement feedforward control for each wafer. SIMS result showed the ability to control the channeling implantation angle within target angle.