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Abstract <p>This paper presents Secondary Ions Mass Spectrometry (SIMS) data and analysis of antimony dopant profiles in silicon implanted with an energy of 7.0&#xa0;MeV at non-channeled random direction, axial [001]-channeled, and planar (220)-channeled implant conditions. The antimony ion energy was chosen to get distribution profiles similar to arsenic implanted at 4.5&#xa0;MeV. Recently arsenic implantations with very high energies are widely used for power devices, whereas antimony implants at very high energies are relatively new and require further characterization. To avoid lateral shifts, shadowing effects, reduce implant damage, and to use channeling to increase ion penetration depth, the majority of high-energy implants are performed at normal incidence or low tilt beam angles. Precise alignment and control of ion beam angles is therefore extremely important.</p> Graphical abstract <p></p>

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Comparison of arsenic and antimony dopant distribution profiles of very high energy implantations

  • 期刊论文

  • 发表日期：

    2025年2月4日

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  • Serguei Kondratenko,
  • Leonard Rubin

摘要

Abstract

This paper presents Secondary Ions Mass Spectrometry (SIMS) data and analysis of antimony dopant profiles in silicon implanted with an energy of 7.0 MeV at non-channeled random direction, axial [001]-channeled, and planar (220)-channeled implant conditions. The antimony ion energy was chosen to get distribution profiles similar to arsenic implanted at 4.5 MeV. Recently arsenic implantations with very high energies are widely used for power devices, whereas antimony implants at very high energies are relatively new and require further characterization. To avoid lateral shifts, shadowing effects, reduce implant damage, and to use channeling to increase ion penetration depth, the majority of high-energy implants are performed at normal incidence or low tilt beam angles. Precise alignment and control of ion beam angles is therefore extremely important.

Graphical abstract