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<p>The photo-modulated reflectance (PMR) technique is extensively utilized for monitoring ion implantation processes in Si wafers and a tool applicable to SiC wafers is under continuous development at Semilab Ltd. In this work, we present the results measured by our Semilab PMR-2200C device, designed primarily for ion-implanted SiC wafer monitoring. Moreover, the same device is also suitable for effectively monitor ion-implanted Si wafers as well. Under appropriate measurement conditions, monotonous trend of the PMR signal vs. implantation dose, e.g., the amount of damage, can be observed in a wide dose range, both for SiC and Si. Therefore, PMR is an effective non-destructive, non-contact tool for high-throughput process monitoring of the as-implanted wafers.</p> Graphical abstract <p></p>

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Versatile monitoring of ion implantation processes in Si and SiC wafers using the PMR-C technique

  • 期刊论文

  • 发表日期：

    2025年2月13日

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  • D. Ullrich,
  • Z. Bozóki,
  • B. M. Kovács,
  • Ö. Sepsi,
  • F. Ujhelyi,
  • Z. Zolnai,
  • J. Szivós,
  • G. Nádudvari,
  • L. Balogh

摘要

The photo-modulated reflectance (PMR) technique is extensively utilized for monitoring ion implantation processes in Si wafers and a tool applicable to SiC wafers is under continuous development at Semilab Ltd. In this work, we present the results measured by our Semilab PMR-2200C device, designed primarily for ion-implanted SiC wafer monitoring. Moreover, the same device is also suitable for effectively monitor ion-implanted Si wafers as well. Under appropriate measurement conditions, monotonous trend of the PMR signal vs. implantation dose, e.g., the amount of damage, can be observed in a wide dose range, both for SiC and Si. Therefore, PMR is an effective non-destructive, non-contact tool for high-throughput process monitoring of the as-implanted wafers.

Graphical abstract