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<p>This study proposes a method to observe the angle distribution of ions in beams in the vertical direction driving a Si (100) wafer with only tilt/twist. Tilt/twist = 35.7°/10° were proven useful for observing the angle distribution in the vertical direction independent of that in the horizontal direction.</p> Graphical Abstract <p>This study proposes a method to observe the angle distribution of ions in beams in the vertical direction driving a Si (100) wafer with only tilt/twist. Tilt/twist = 35.7°/10° were proven useful for observing the angle distribution in the vertical direction independent of that in the horizontal direction.</p>

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Observation of angle fluctuation utilizing plane channel

  • 期刊论文

  • 发表日期：

    2025年2月3日

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  • Takuya Sakaguchi,
  • Sho Kawatsu,
  • Yoji Kawasaki

摘要

This study proposes a method to observe the angle distribution of ions in beams in the vertical direction driving a Si (100) wafer with only tilt/twist. Tilt/twist = 35.7°/10° were proven useful for observing the angle distribution in the vertical direction independent of that in the horizontal direction.

Graphical Abstract

This study proposes a method to observe the angle distribution of ions in beams in the vertical direction driving a Si (100) wafer with only tilt/twist. Tilt/twist = 35.7°/10° were proven useful for observing the angle distribution in the vertical direction independent of that in the horizontal direction.