<p>With the energy enhancement of the VIISta Trident™ of Applied Materials Inc. to 120&#xa0;keV the tool offers new application options, where charge exchange effects play an important role. This work describes the introduction of VIISta Trident™ platform high dose ribbon beam single wafer implanter with a wide energy range from 0.2&#xa0;keV to 120&#xa0;keV, compact footprint, and a new enhanced dose compensation system (Dcomp) in an existing production environment. The Trident™ Dcomp principle, test wafer results, differences between implanted species, and device data are presented as well as a best-known method for introducing Dcomp into a process of record (POR). The results have shown that the new Dcomp algorithm is able to improve significantly the vertical uniformity of high dose high power implantation of photo-resist covered wafers. The algorithm allows a comparable implanted dose independent of the photo-resist coverage and improves matching between tools.</p> Graphical abstract <p></p>