<p>High-energy proton implants are used in the manufacturing process of IGBT devices to improve performance by extending minority carrier lifetime and reducing switching speeds. The energy requirement for H⁺ implanted into these devices exceeds the nuclear fusion reaction threshold above 300&#xa0;keV of beamline liners containing ¹²C, ¹³C, and ²⁹Si within silicon wafers of the ion implant systems. The prompt γ-ray photon radiation generated from ¹²C(p, γ)¹³N and ²⁹Si(p, γ)³⁰P reactions has been characterized using a photon energy resolving Sodium Iodide (NaI) scintillating crystal detection system. Determination of the photon energy is instrumental for designing a precise shielding system that can prevent exposure to ionizing radiation. Dosimetry results are reported to characterize the radiation emitted from post-implant Si wafers given the ²⁹Si(p, γ)³⁰P reaction, radiation emitted from post-implant SiC wafers given the ¹²C(p,γ)¹³N reaction, and the radiation present from the graphite beamline liners compared to high-Z mitigative liners.</p> Graphical abstract <p></p>