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<p>Sumitomo Heavy Industries Ion Technology’s single-wafer ultra-high-energy implanter (SS-UHE) was developed to meet the strict fabrication requirements of cutting-edge CMOS image sensors (CIS) and realize ion implantation with precise angle control using a unique technology. Advanced SS-UHE technology can be used to fabricate superjunctions (SJs) in SiC power devices. In this study, we investigated the high-energy channeling implantation of phosphorus into 4H-SiC using SS-UHE.</p> Graphical abstract <p></p>

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High-energy channeling implantation in SiC substrates with precise angle control of SS-UHE

  • 期刊论文

  • 发表日期：

    2025年1月13日

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  • Akichika Ono,
  • Takuya Sakaguchi,
  • Yoji Kawasaki

摘要

Sumitomo Heavy Industries Ion Technology’s single-wafer ultra-high-energy implanter (SS-UHE) was developed to meet the strict fabrication requirements of cutting-edge CMOS image sensors (CIS) and realize ion implantation with precise angle control using a unique technology. Advanced SS-UHE technology can be used to fabricate superjunctions (SJs) in SiC power devices. In this study, we investigated the high-energy channeling implantation of phosphorus into 4H-SiC using SS-UHE.

Graphical abstract