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<p>Compared to conventional Si power devices, SiC power devices enable more efficient power conversion and allow for the miniaturization of modules. As a result, they are increasingly being adopted across a wide range of industries, from industrial applications to the automotive sector (1). Nisshin Ion Equipment Co., Ltd. supplies SiC-specific high-temperature ion implantation systems, the 'IMPHEAT' series, to SiC device manufacturers worldwide, and these systems are used in production lines. Meanwhile, the growing demand for SiC power devices has led to an increased frequency of Al implantation processes. In response to this, we report on the development of an ion source capable of producing a high-current Al ion beam to enhance productivity.</p> Graphical abstract <p></p>

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IMPHEAT-II: A novel ion source with extended lifetime and wide beam current dynamic range for SiC power device mass production

  • 期刊论文

  • 发表日期：

    2025年4月21日

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  • Yuta Iwanami,
  • Yuya Hirai,
  • Shinkichi Hamada,
  • Weijiang Zhao,
  • Kohei Tanaka,
  • Takashi Sakamoto,
  • Sami Hahto,
  • George Sacco

摘要

Compared to conventional Si power devices, SiC power devices enable more efficient power conversion and allow for the miniaturization of modules. As a result, they are increasingly being adopted across a wide range of industries, from industrial applications to the automotive sector (1). Nisshin Ion Equipment Co., Ltd. supplies SiC-specific high-temperature ion implantation systems, the 'IMPHEAT' series, to SiC device manufacturers worldwide, and these systems are used in production lines. Meanwhile, the growing demand for SiC power devices has led to an increased frequency of Al implantation processes. In response to this, we report on the development of an ion source capable of producing a high-current Al ion beam to enhance productivity.

Graphical abstract