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<p>An isotopically enriched Boron Trifluoride ION-X® gas delivery system was evaluated at Microchip Technology on a Varian E220 implanter and compared with enriched BF3 from an SDS-3 cylinder. The primary focus of this evaluation was to verify that metal contamination, especially Iron, would not be a concern when ION-X is used in standard ion implant processes. To this end, Time-of-Flight Secondary Ion Mass Spectroscopy (TOF–SIMS) and Total Reflection X-ray Fluorescence (TXRF) testing was performed on bare silicon wafers implanted with ION-X®. It was observed there were no levels of metal contamination above specification limits for the toolset. No Iron was observed in either lab testing nor in mass spectra. BF3 ION-X® implanted devices’ behavior was indistinguishable from process of record (POR) implanted devices in electrical end-of-line tests. Surface resistivity measurements of ION-X® implanted test wafers were within 1% difference from POR resistivity measurements.</p> Graphical abstract <p></p>

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Results of an evaluation of isotopically enriched boron trifluoride ION-X® gas delivery system on a medium current implanter

  • 期刊论文

  • 发表日期：

    2025年1月28日

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  • Ronald C. Johnson,
  • Bao Tran Nguyen,
  • Jess Nelson,
  • Volker Heilmann,
  • Robin Chiu

摘要

An isotopically enriched Boron Trifluoride ION-X® gas delivery system was evaluated at Microchip Technology on a Varian E220 implanter and compared with enriched BF3 from an SDS-3 cylinder. The primary focus of this evaluation was to verify that metal contamination, especially Iron, would not be a concern when ION-X is used in standard ion implant processes. To this end, Time-of-Flight Secondary Ion Mass Spectroscopy (TOF–SIMS) and Total Reflection X-ray Fluorescence (TXRF) testing was performed on bare silicon wafers implanted with ION-X®. It was observed there were no levels of metal contamination above specification limits for the toolset. No Iron was observed in either lab testing nor in mass spectra. BF3 ION-X® implanted devices’ behavior was indistinguishable from process of record (POR) implanted devices in electrical end-of-line tests. Surface resistivity measurements of ION-X® implanted test wafers were within 1% difference from POR resistivity measurements.

Graphical abstract