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Abstract <p>The basic characteristics of low-energy and high-dose phosphorus monomer (P), dimer (P<sub>2</sub>), and tetramer (P<sub>4</sub>) implantation were compared. The implantation damage and the effects of post-implantation-annealing were examined using ThermaWave (TW), cross-sectional transmission electron microscopy (XTEM), and secondary ion mass spectroscopy (SIMS). The threshold dose to amorphization and thickness of the amorphous layer after implantation using P<sub>4</sub> were found to be smaller and thicker, respectively, than that obtained after implantation using P<sub>2</sub> and P. The phosphorus profiles of the as-implanted and post-implantation annealed samples were analyzed using SIMS. Additionally, the effects of implantation temperature were evaluated by comparing the results obtained after P<sub>4</sub> implantation at room temperature (RT; 15&#xa0;°C) with those obtained after P<sub>2</sub> implantation at low temperature (LT; − 60&#xa0;°C). In conclusion, P<sub>4</sub> implantation at RT is a suitable choice for achieving the desired shallow box-type dopant profiles for shallow junction formation and contact doping in next-generation devices.</p> Graphical abstract <p></p>

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Characterization of low-energy molecular phosphorus implant under low-thermal-budget annealing

  • 期刊论文

  • 发表日期：

    2025年1月10日

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  • Tae-Hoon Huh,
  • Akichika Ono,
  • Yoji Kawasaki

摘要

Abstract

The basic characteristics of low-energy and high-dose phosphorus monomer (P), dimer (P2), and tetramer (P4) implantation were compared. The implantation damage and the effects of post-implantation-annealing were examined using ThermaWave (TW), cross-sectional transmission electron microscopy (XTEM), and secondary ion mass spectroscopy (SIMS). The threshold dose to amorphization and thickness of the amorphous layer after implantation using P4 were found to be smaller and thicker, respectively, than that obtained after implantation using P2 and P. The phosphorus profiles of the as-implanted and post-implantation annealed samples were analyzed using SIMS. Additionally, the effects of implantation temperature were evaluated by comparing the results obtained after P4 implantation at room temperature (RT; 15 °C) with those obtained after P2 implantation at low temperature (LT; − 60 °C). In conclusion, P4 implantation at RT is a suitable choice for achieving the desired shallow box-type dopant profiles for shallow junction formation and contact doping in next-generation devices.

Graphical abstract