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<p>The recrystallization behavior of a fully amorphized C<sub>3</sub>H<sub>5</sub>-molecular-ion-implanted Si substrate surface is evaluated from the Si 2p spectra obtained by X-ray photoelectron spectroscopy. The change in the crystalline fraction of the fully amorphized C<sub>3</sub>H<sub>5</sub>-molecular-ion-implanted Si substrate surface after thermal annealing treatment showed a sigmoidal curve and was analyzed using the Kolmogorov–Johnson–Mehl–Avrami equation. The Avrami index derived was between 2 and 3, which indicated the two-dimensional recrystallization of the surface. Cross-sectional transmission electron microscopy observations showed that recrystallization from the interior to the surface was partially delayed. Atom probe tomography revealed non-uniformly distributed high-concentration carbon at the amorphous/crystalline interface, which is considered to be the cause of the partial delay of recrystallization. It was concluded that the fully amorphized C<sub>3</sub>H<sub>5</sub>-molecular-ion-implanted Si substrate is recrystallized two-dimensionally from crystal islands that first reached the surface owing to the partial delay of the internal recrystallization caused by locally distributed high-concentration carbon.</p> Graphical abstract <p></p>

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Recrystallization kinetics of fully amorphized C3H5-molecular-ion-implanted silicon substrate surface

  • 期刊论文

  • 发表日期：

    2025年1月3日

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  • Koji Kobayashi,
  • Ryosuke Okuyama,
  • Takeshi Kadono,
  • Ayumi Onaka-Masada,
  • Ryo Hirose,
  • Akihiro Suzuki,
  • Sho Nagatomo,
  • Yoshihiro Koga,
  • Koji Sueoka,
  • Kazunari Kurita

摘要

The recrystallization behavior of a fully amorphized C3H5-molecular-ion-implanted Si substrate surface is evaluated from the Si 2p spectra obtained by X-ray photoelectron spectroscopy. The change in the crystalline fraction of the fully amorphized C3H5-molecular-ion-implanted Si substrate surface after thermal annealing treatment showed a sigmoidal curve and was analyzed using the Kolmogorov–Johnson–Mehl–Avrami equation. The Avrami index derived was between 2 and 3, which indicated the two-dimensional recrystallization of the surface. Cross-sectional transmission electron microscopy observations showed that recrystallization from the interior to the surface was partially delayed. Atom probe tomography revealed non-uniformly distributed high-concentration carbon at the amorphous/crystalline interface, which is considered to be the cause of the partial delay of recrystallization. It was concluded that the fully amorphized C3H5-molecular-ion-implanted Si substrate is recrystallized two-dimensionally from crystal islands that first reached the surface owing to the partial delay of the internal recrystallization caused by locally distributed high-concentration carbon.

Graphical abstract