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<p>Annealings in the melting regime using sub-µs lasers are particularly relevant for (i) advanced semiconductor nodes (&lt; 7&#xa0;nm) that require very high active dopant concentrations, and (ii) 3D sequential integrations with stringent thermal budget constraints. However, the liquid-phase epitaxial regrowth associated with this process presents several challenges. One notable issue is located at the edge of the laser beam, where surface roughness can appear and impact device performances. Specifically, there is a boundary region on the surface between areas remaining solid and those covered by a continuous liquid layer. Local molten regions (LMRs) that form in this boundary area can induce roughness near the beam edges. This study aims to investigate LMRs generated by microsecond (µs) and nanosecond (ns) laser annealing (LA) on (100) and (111) silicon substrates. Various surface preparations are examined, including “HF-last” (oxide-free), chemical oxidation, and thermal oxidation. The size and shape of LMRs are analyzed and discussed.</p> Graphical abstract <p></p>

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Understanding nanostructures formation on Si surfaces at the melting threshold by laser annealing

  • 期刊论文

  • 发表日期：

    2025年2月5日

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  • M. Opprecht,
  • S. Kerdilès,
  • A. Messaoudi,
  • V. Balan,
  • R. Coquand,
  • Z. Chehadi,
  • A. Talbi,
  • L. Thuries

摘要

Annealings in the melting regime using sub-µs lasers are particularly relevant for (i) advanced semiconductor nodes (< 7 nm) that require very high active dopant concentrations, and (ii) 3D sequential integrations with stringent thermal budget constraints. However, the liquid-phase epitaxial regrowth associated with this process presents several challenges. One notable issue is located at the edge of the laser beam, where surface roughness can appear and impact device performances. Specifically, there is a boundary region on the surface between areas remaining solid and those covered by a continuous liquid layer. Local molten regions (LMRs) that form in this boundary area can induce roughness near the beam edges. This study aims to investigate LMRs generated by microsecond (µs) and nanosecond (ns) laser annealing (LA) on (100) and (111) silicon substrates. Various surface preparations are examined, including “HF-last” (oxide-free), chemical oxidation, and thermal oxidation. The size and shape of LMRs are analyzed and discussed.

Graphical abstract