Horizontal uniformity improvements by using beam corrected profiles on the VIISta900/3D
摘要
With the vacuum system changes of the VIIStaTM900 platform and the later development of a dose compensation algorithm, the uniformity of medium power implantations into partially photoresist covered layers could be significantly improved. Based on these improvements, further adjustments of the dose system and the software algorithm were performed over the years with special focus on decreasing the recipe limit for horizontal uniformity. Within this work, the horizontal uniformity challenges will be discussed and the evaluation results of a new software algorithm will be presented. The results have shown that the new algorithm is able to improve the horizontal uniformity especially for boron processes and enables a decrease in the corresponding limits within the process recipes without negatively impacting the beam setup success rate.
Graphical abstract