Evaluation of the a-IGZO thin film transistor's performance in radio frequency and analog measurements

The author examines the DC, analog, and radio frequency performance of IGZO-based thin film transistors and optimal findings reported by TCAD Silvaco simulation. The author analyzed performance parameters including drain conductance, transconductance, intrinsic gain, transconductance generation factor, gate capacitance, cut off frequency, transconductance frequency product, gain frequency product, gain transconductance frequency product, gain bandwidth product and maximal oscillation frequency. The significant results obtain for high k dielectric material HfO₂ at 150 nm as the sub threshold swing of 0.17 dec, threshold voltage of 0.56 V, I_ON/I_OFF of 2.44 × 10¹⁵ and A_v of 42.9 dB, TGF of 6.60 V⁻¹, f_T of 425 kHz, f_osc of 64.74 kHz, GFP of 7.17 GHz, TFP of 241 kHz, GTFP of 426 MHz and GBWP 76.52 kHz. This study indicates that TFT utilizing high-k material HfO₂ with a 150 nm oxide layer and a 5 µm channel length considerably enhances performance.