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<p>The described research shows a methodology for fabricating Integrated Pt/Ti/AlN (002)-oriented/Pt/Ti/UNCD films grown on SiO<sub>2</sub>/Si substrates to fabricate MEMS microcantilevers. The process induces reduced remanent bending of microcantilever and slight undercut of the microcantilever’s support wall. The UNCD film is grown via Hot Filament Chemical Vapor Deposition (HFCVD). The Pt and Ti films, for top and bottom electrodes, are grown via RF (Ti) and DC (Pt) magnetron sputtering. Aluminum Nitride (AlN) films are grown via RF Reactive Magnetron Sputtering. The metals and AlN films are grown at room temperature; the UNCD films can be grown at ~400&#xa0;°C, making the process compatible with CMOS technologies. Three photolithography steps were implemented to fabricate the microcantilevers. A Maskless Smart UV Print System from Microlight 3D was used for photoresist exposure. SEM images of microcantilevers show reduced remanent beam’s bending and undercut &lt; 10&#xa0;µm on the supporting wall of the microcantilever.</p> Graphical abstract <p></p>

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Methodology for fabrication of microcantilevers based on the integration of Pt/Ti/AlN (002)-oriented/Pt/Ti films grown on ultrananocrystalline diamond (UNCD) films on SiO2/Si substrates

  • 期刊论文

  • 发表日期：

    2025年1月3日

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  • Daniel Villarreal,
  • Victoria Estrada,
  • Elida de Obaldía,
  • Orlando Auciello

摘要

The described research shows a methodology for fabricating Integrated Pt/Ti/AlN (002)-oriented/Pt/Ti/UNCD films grown on SiO2/Si substrates to fabricate MEMS microcantilevers. The process induces reduced remanent bending of microcantilever and slight undercut of the microcantilever’s support wall. The UNCD film is grown via Hot Filament Chemical Vapor Deposition (HFCVD). The Pt and Ti films, for top and bottom electrodes, are grown via RF (Ti) and DC (Pt) magnetron sputtering. Aluminum Nitride (AlN) films are grown via RF Reactive Magnetron Sputtering. The metals and AlN films are grown at room temperature; the UNCD films can be grown at ~400 °C, making the process compatible with CMOS technologies. Three photolithography steps were implemented to fabricate the microcantilevers. A Maskless Smart UV Print System from Microlight 3D was used for photoresist exposure. SEM images of microcantilevers show reduced remanent beam’s bending and undercut < 10 µm on the supporting wall of the microcantilever.

Graphical abstract