Toward thermally stable Ni(GeSn) contacts using pre-amorphization by implantation or nanosecond laser annealing
摘要
Ni-based metallization for GeSn devices provides high-quality contacts with low sheet and contact resistances. However, the Ni/GeSn system has a major drawback: its poor thermal stability due to NiGe agglomeration and Sn segregation above 350 °C. This study focuses on two different process options, namely, pre-amorphization by implantation (PAI) and UV nanosecond laser annealing (UV-NLA), to improve the thermal stability of Ni(GeSn) alloys. We have shown that the use of C-PAI or UV-NLA has a positive effect on the Ni(GeSn) morphology and helps to delay Sn segregation and NiGe agglomeration phenomena. This is a major advance in thermally stable Ni-based contacts on GeSn.
Graphical abstract