Evaluate the effectiveness of the CIGS solar cell structure based on the SCAPD—1D

This study presents a detailed modeling and numerical simulation of Cu (In, Ga) Se₂ (CIGS) solar cells using SCAPS-1D software. The research primarily focuses on exploring the effects of variations in the absorber layer’s bandgap and donor concentrations. Additionally, the study examines the influence of high defect state density on the overall device performance. The findings indicate that specific characteristics are crucial for optimizing CIGS solar cells. The results reveal that enhancing both the bandgap and donor concentration (N_D) significantly improves device efficiency. This enhancement could be due to higher quasi-Fermi energy-level splitting and an appropriate band offset between the defect layer and the buffer layer, which ultimately resulted in an increase in V_OC, FF, and overall conversion efficiency. The research underscores the critical role of optical and electrical properties in the growth and performance optimization of CIGS solar cells.