Influence of reactant properties in deposition of silicon oxycarbide thin films by hot filament chemical vapor deposition

This research investigates the properties of silicon oxycarbide thin films obtained by Hot Filament Chemical Vapor Deposition, utilizing tetraethoxysilane and MCM-41 as reactants. A comprehensive analysis of the influence of MCM-41 on thin-film properties is conducted by systematically varying its quantities (5, 10, and 15 g). Energy-dispersive X-ray analysis shows the presence of carbon, oxygen, and silicon, consistent with the use of TEOS and MCM-41. Microscopic examination reveals distinct morphologies in the silicon oxycarbide thin films; when only TEOS is employed, the surface exhibits compact aggregates heterogeneously distributed, while the introduction of both TEOS and MCM-41 results in porous clusters. Furthermore, the presence of MCM-41 enhances photoluminescence in the thin films, suggesting quantum confinement effects. This study provides valuable insights into the synergistic interplay between TEOS and MCM-41, offering opportunities for optimizing silicon oxycarbide thin films for a range of applications spanning from microelectronics to optoelectronics.