Structural and optical properties of sulfurized Cu₂ZnSnS₄ films grown by one step method using calcined powders for electrical properties study of Al/p-Cu₂ZnSnS₄ Schottky diode

In the present study, we have investigated the effect of the combination of calcination and sulfurization processes to enhance the properties of Cu₂ZnSnS₄ (CZTS) thin films. CZTS thin films were elaborated using one-step thermal evaporation technique using calcined powders at different temperatures (800, 900, and 1000 °C). Moreover, the as-deposited films were sulfurized at 400 °C for 30 min under nitrogen gas. The structural and optical properties of samples were presented. All sulfurized films exhibited polycrystalline nature with improved crystallinity and high optical transmittance in the visible region. Electrical properties of Al/p-CZTS Schottky diode were studied using I–V characteristics of Mo/CZTS/Al structure. Schottky diode parameters such as ideality factor, saturation current, and series resistance were calculated.