Dual-band InSb metamaterial absorber based on temperature and magnetic field control

In recent years, terahertz (THz) metasurface absorbers have received extensive attention. In this paper, a dual-band metasurface (DBM) absorber is proposed. The absorber is a micro-axis periodic structure based on all InSb semiconductor materials. The dual-frequency resonance behavior of the DBM absorber at 1.663 THz and 1.832 THz is realized. At the corresponding resonance peak frequency, by changing the temperature, the linear fitting temperature sensitivity of the DBM absorber can be obtained to be about 10.125 GHz/K and 5.625 GHz/K. When a steady magnetic field along the x direction is applied for control, the corresponding magnetic field sensitivities are 52.5 GHz/T and 8.75 GHz/T, respectively. Therefore, the reported DBM absorber structure can also be used as an absorber, sensor and other optoelectronic devices in the terahertz band to find potential applications.