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On the limits of Zn doping in dual-polyhedral Cs7Cd3Br13

  • Andrew J. Gruber,
  • Kulatheepan Thanabalasingam,
  • Kyle M. McCall

摘要

Low-dimensional metal halides featuring self-trapped exciton emission have emerged as self-absorption-free emitters for applications in solid-state lighting, scintillators, and luminescent solar concentrators. One recent addition to this materials family is Cs7Cd3Br13, which exhibits a complex mixed 1D-0D structure with isolated [CdBr4]2− tetrahedra and corner-connected 1D chains of [CdBr4Br2/2]3− octahedra. Here, we develop a strategy to dope Zn2+ (an isoelectronic dopant that will selectively substitute the tetrahedral site) into Cs7Cd3Br13 to learn more about what drives emission in this dual-polyhedral system. We test the range of substitution from 0 to 67% (where 2/3 substitution would displace 100% of the tetrahedral Cd atoms), finding that the upper limit is significantly lower than expected at 7.5% Zn. This low limit arises from non-luminescent competing phases Cs3CdBr5 and Cs2ZnBr4. This work highlights the complexity of this compound and will enable further study of the details of self-trapped exciton emission in Zn-doped Cs7Cd3Br13.

Graphical abstract