Demonstration of vertical schottky barrier diodes based on α-Ga₂O₃ thin films enabled by corundum structured rh-ITO bottom electrodes

This study explores the heteroepitaxial growth of α-Ga₂O₃ on rhombohedral indium tin oxide (rh-ITO) bottom electrodes for Schottky barrier diode applications. The investigation delves into the influence of growth temperature on α-Ga₂O₃ thin films, considering variations with and without α-Fe₂O₃ buffer layers. Results highlighted successful α-Ga₂O₃ growth on rh-ITO with an α-Fe₂O₃ buffer layer at temperatures ranging from 400 to 500 °C. Additionally, κ-Ga₂O₃ was observed on bare rh-ITO at 450 °C and 500 °C. A Schottky barrier diode was fabricated utilizing the α-Ga₂O₃/rh-ITO heterostructure, incorporating a Ni/Au electrode for Schottky contacts. Current–voltage measurements exhibited rectification behavior. This research contributes valuable insights into the heteroepitaxial growth of α-Ga₂O₃ thin films and their potential applications in electronic devices.