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<p>A silicon carbide optically controlled bidirectional device based on PNP structure is designed and fabricated in this work. The lightly doped N region acts as the voltage-resistant region and photoconductive region to adjust the resistance and realize the bidirectional optically controlled switching-on of the device. The experimental results indicate that both forward and reverse breakdown voltage of the device are higher than 1&#xa0;kV. Under 355&#xa0;nm UV light, the device achieves a 73&#xa0;mA peak on-state current at 300&#xa0;V bias with a 10&#xa0;ns rise time. It eliminates external diodes over the full voltage range, offering a compact and sub-microsecond bidirectional solution.</p> Graphical abstract <p></p>

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Fabrication and characterization of SiC optically controlled bidirectional device based on PNP structure

  • 期刊论文

  • 发表日期：

    2026年5月1日

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  • Lechen Liu,
  • Xi Wang,
  • Xuhui Pu,
  • Wenqiang Wu,
  • Jichao Hu,
  • Jing Liu,
  • Xinmei Wang,
  • Yong Yang,
  • Ying Yang,
  • Hongbin Pu

摘要

A silicon carbide optically controlled bidirectional device based on PNP structure is designed and fabricated in this work. The lightly doped N region acts as the voltage-resistant region and photoconductive region to adjust the resistance and realize the bidirectional optically controlled switching-on of the device. The experimental results indicate that both forward and reverse breakdown voltage of the device are higher than 1 kV. Under 355 nm UV light, the device achieves a 73 mA peak on-state current at 300 V bias with a 10 ns rise time. It eliminates external diodes over the full voltage range, offering a compact and sub-microsecond bidirectional solution.

Graphical abstract