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<p>This study investigated the physical properties of gallium nitride doped with hafnium, a subject of recent research. The hafnium-doped gallium nitride thin film produced by the thermionic vacuum arc method was aimed at achieving p-type current spreading layer properties with a low roughness value. The hafnium-doped gallium nitride thin film, with a thickness of 55&#xa0;nm, exhibited properties that were consistent with the existing literature. In nanotechnological applications, hafnium-doped gallium nitride thin film produced by the thermionic vacuum arc method has shown suitable properties for electronic power applications and light-emitting device applications.</p> Graphical abstract <p></p>

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Thermionic vacuum arc synthesis of Hf-doped GaN: Nanocrystalline films with p-type conductivity

  • 期刊论文

  • 发表日期：

    2026年4月29日

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  • Soner Özen,
  • Suat Pat,
  • Şadan Korkmaz

摘要

This study investigated the physical properties of gallium nitride doped with hafnium, a subject of recent research. The hafnium-doped gallium nitride thin film produced by the thermionic vacuum arc method was aimed at achieving p-type current spreading layer properties with a low roughness value. The hafnium-doped gallium nitride thin film, with a thickness of 55 nm, exhibited properties that were consistent with the existing literature. In nanotechnological applications, hafnium-doped gallium nitride thin film produced by the thermionic vacuum arc method has shown suitable properties for electronic power applications and light-emitting device applications.

Graphical abstract