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<p>The energy conversion performance of Cu<sub>2</sub>ZnSnS<sub>4</sub> can be enhanced by doping Cu at Zn sites, forming the doped compounds Cu<sub>2+x</sub>Zn₁<sub>−x</sub>SnS<sub>4</sub>. In this study, Cu<sub>2+x</sub>Zn<sub>1-x</sub>SnS<sub>4</sub> was synthesised using the mechanical alloying method. It was found that samples with doping levels <i>x</i> &lt; 0.4 remained single-phase and were thermally stable up to 923&#xa0;K. The <i>x</i> = 0.35 sample exhibited semi-metallic behaviour in its electrical conductivity (σ). Both the power factor (<i>PF</i> = <i>S</i><sup>2</sup>σ) and the dimensionless figure of merit (<i>ZT</i>) showed significant improvements compared with the undoped compound, reaching maximum values of 598&#xa0;μW/mK and 0.36 at 726&#xa0;K, respectively.</p> Graphical abstract <p></p>

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A study on the doping limitation of Cu at Zn sites in the Cu2+xZn1-xSnS4 semiconductor for thermoelectric conversion applications

  • 期刊论文

  • 发表日期：

    2026年4月16日

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  • Bui Duc Long,
  • Le Thi Bang,
  • Tran Bao Trung,
  • Phan Bach Thang,
  • Pham Thanh Tuan Anh

摘要

The energy conversion performance of Cu2ZnSnS4 can be enhanced by doping Cu at Zn sites, forming the doped compounds Cu2+xZn₁−xSnS4. In this study, Cu2+xZn1-xSnS4 was synthesised using the mechanical alloying method. It was found that samples with doping levels x < 0.4 remained single-phase and were thermally stable up to 923 K. The x = 0.35 sample exhibited semi-metallic behaviour in its electrical conductivity (σ). Both the power factor (PF = S2σ) and the dimensionless figure of merit (ZT) showed significant improvements compared with the undoped compound, reaching maximum values of 598 μW/mK and 0.36 at 726 K, respectively.

Graphical abstract