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<p>With the scaling of device dimensions, metal interconnects have become a key performance-limiting factor in integrated circuits. Defects such as vacancies and Si doping can reduce the electrical conductivity of interconnect materials. It is important to note that our research is based on theoretical calculations rather than experimental measurements. We studied vacancy and Si doping effects on 16 metals. Both defects reduce conductivity via enhanced electron scattering. Si doping strongly suppresses conductivity in Mg, Al, Ca, Cu, Zn, Ag, In, and Au due to orbital hybridization reducing conducting electrons. Vacancies severely degrade Nb, Mo, Ru, Rh, W, Os, Ir, and Pt because of greater lattice distortion and stronger scattering. Pt, Rh, and Ir retain the best conductivity.</p> Graphical abstract <p></p>

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Role of vacancies and silicon doping in modulating the electrical transport of metal interconnects

  • 期刊论文

  • 发表日期：

    2026年3月4日

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  • Jiamiao Yang,
  • Shunbo Hu

摘要

With the scaling of device dimensions, metal interconnects have become a key performance-limiting factor in integrated circuits. Defects such as vacancies and Si doping can reduce the electrical conductivity of interconnect materials. It is important to note that our research is based on theoretical calculations rather than experimental measurements. We studied vacancy and Si doping effects on 16 metals. Both defects reduce conductivity via enhanced electron scattering. Si doping strongly suppresses conductivity in Mg, Al, Ca, Cu, Zn, Ag, In, and Au due to orbital hybridization reducing conducting electrons. Vacancies severely degrade Nb, Mo, Ru, Rh, W, Os, Ir, and Pt because of greater lattice distortion and stronger scattering. Pt, Rh, and Ir retain the best conductivity.

Graphical abstract