<p>The crystal structure, optical, and electrical parameters of Mg₁₀Zn₉₀O films prepared by spray pyrolysis and doped with 0–6.0 at% Al are studied. The films were investigated using scanning electronic microscopy, energy dispersive spectroscopy, X-ray diffraction, transmittance, photoluminescence, and resistivity monitoring. The Al-doped Mg₁₀Zn₉₀O films exhibit the wurtzite crystalline phase, but second phases, related to Al and AlO clusters, appear when Al exceeds 2.0 at%. The films are characterized by a transmittance of 80–90%, a high PL intensity and an electrical resistivity of 2.5 × 10⁻³Ωcm with 1.0 at%Al in the films. The studied Mg₁₀Zn₉₀O:Al films are important for optoelectronic applications.</p> Graphical abstract <p></p>