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<p>We propose a high-temperature-sensitivity SiC pin temperature sensor featuring a unique p<sup>+</sup> region design with multiple densely arranged strips (1.15&#xa0;μm width, 0.55&#xa0;μm separation). The narrow spacing confines forward current flow to the p<sup>+</sup> strips and n<sup>−</sup> drift layer. The device exhibits a turn-on voltage of 3.2&#xa0;V, comparable to conventional pin diodes, but a higher forward voltage drop (5.87&#xa0;V at 100A/cm<sup>2</sup>). The device obtains higher temperature sensitivity by using a crowded p<sup>+</sup> strip structure. At 0.1&#xa0;μA, the sensor achieves a sensitivity of 4.19&#xa0;mV/°C, a 16.1% improvement over conventional pin structures, which are fabricated in the same process.</p> Graphical abstract <p></p>

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Sensitivity improvement of SiC pin temperature sensor by crowded p+ strip structure

  • 期刊论文

  • 发表日期：

    2025年9月22日

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  • Wenqiang Wu,
  • Xi Wang,
  • Lechen Liu,
  • Yaxin Wang,
  • Yao Li,
  • Hongbin Pu

摘要

We propose a high-temperature-sensitivity SiC pin temperature sensor featuring a unique p+ region design with multiple densely arranged strips (1.15 μm width, 0.55 μm separation). The narrow spacing confines forward current flow to the p+ strips and n− drift layer. The device exhibits a turn-on voltage of 3.2 V, comparable to conventional pin diodes, but a higher forward voltage drop (5.87 V at 100A/cm2). The device obtains higher temperature sensitivity by using a crowded p+ strip structure. At 0.1 μA, the sensor achieves a sensitivity of 4.19 mV/°C, a 16.1% improvement over conventional pin structures, which are fabricated in the same process.

Graphical abstract