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<p>We investigate the novel electron beam resist Medusa 84 SiH by Allresist GmbH (Germany) for nanostructuring of single crystal diamond and its effects on the spin properties of nitrogen vacancy (NV) centers in nanopillars as prototypes for photonic structures. We find contrast curves comparable to previously employed resists (Hydrogen silsequioxane FOx). We present a selectivity for diamond etching of 11 to 12. Using an adhesion-promoting silicon interlayer potentially enables fabrication yields of up to 96%. We measure <InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="43579_2025_757_Article_IEq1.gif" Format="GIF" Height="16" Rendition="HTML" Resolution="72" Type="Linedraw" Width="17" /> </InlineMediaObject> <EquationSource Format="TEX">\(T_2\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>T</mi> <mn>2</mn> </msub> </math></EquationSource> </InlineEquation> times of up to <InlineEquation ID="IEq2"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="43579_2025_757_Article_IEq2.gif" Format="GIF" Height="6" Rendition="HTML" Resolution="72" Type="Linedraw" Width="17" /> </InlineMediaObject> <EquationSource Format="TEX">\(\sim\)</EquationSource> <EquationSource Format="MATHML"><math> <mo>∼</mo> </math></EquationSource> </InlineEquation>25 <InlineEquation ID="IEq3"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="43579_2025_757_Article_IEq3.gif" Format="GIF" Height="12" Rendition="HTML" Resolution="72" Type="Linedraw" Width="15" /> </InlineMediaObject> <EquationSource Format="TEX">\(\mu\)</EquationSource> <EquationSource Format="MATHML"><math> <mi>μ</mi> </math></EquationSource> </InlineEquation>s before and after processing, demonstrating that the manufactured structures are usable for diamond-based quantum sensing.</p> Graphical abstract <p></p>

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Medusa 84 SiH - A novel high selectivity electron beam resist for diamond quantum technologies

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年6月13日

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  • Oliver Roman Opaluch,
  • Sebastian Westrich,
  • Nimba Oshnik,
  • Philipp Fuchs,
  • Jan Fait,
  • Sandra Wolff,
  • Harry Biller,
  • Mandy Sendel,
  • Christoph Becher,
  • Elke Neu

摘要

We investigate the novel electron beam resist Medusa 84 SiH by Allresist GmbH (Germany) for nanostructuring of single crystal diamond and its effects on the spin properties of nitrogen vacancy (NV) centers in nanopillars as prototypes for photonic structures. We find contrast curves comparable to previously employed resists (Hydrogen silsequioxane FOx). We present a selectivity for diamond etching of 11 to 12. Using an adhesion-promoting silicon interlayer potentially enables fabrication yields of up to 96%. We measure \(T_2\) T 2 times of up to \(\sim\) ∼ 25 \(\mu\) μ s before and after processing, demonstrating that the manufactured structures are usable for diamond-based quantum sensing.

Graphical abstract