Scholarlink

<p>An <i>in situ</i> electrical bias was placed on a perovskite device through the device thickness while under investigation with time-of-flight secondary ion mass spectrometry. The applied bias resulted in an observed reversible migration of halide and lithium ions on the timescale of minutes. The results show a framework that can be used for further study of ion migration in perovskite materials and devices.</p> Graphical abstract <p></p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Applying in situ bias during TOF–SIMS analysis to investigate ion migration in perovskite devices

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年6月30日

查看全文
  • Steven P. Harvey,
  • Isaac E. Gould,
  • Daniel A. Morales,
  • Michael D. McGehee,
  • Axel F. Palmstrom

摘要

An in situ electrical bias was placed on a perovskite device through the device thickness while under investigation with time-of-flight secondary ion mass spectrometry. The applied bias resulted in an observed reversible migration of halide and lithium ions on the timescale of minutes. The results show a framework that can be used for further study of ion migration in perovskite materials and devices.

Graphical abstract