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<p>Understanding the space charge profiles or electrostatic potential distribution is of crucial importance for the design and operation of devices. Here we quantify the excess charge from the phase image utilizing the off-axis electron beam holography on AlN deposited on Pt/HfO<sub>2</sub>/Si (001) by atomic layer epitaxy. Considering the film thickness of ~ 15.6&#xa0;nm and a phase change of 1.4&#xa0;rad, the estimated mean inner potential turns out to be 15.9&#xa0;V with respect to the film, which mostly due to the accumulation of charge.</p> Graphical Abstract <p></p>

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Assessing the charge accumulation in polycrystalline aluminum nitride using electron beam holography

  • 期刊论文

  • 发表日期：

    2025年6月10日

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  • R. Goswami,
  • S. B. Qadri,
  • M. Staruch

摘要

Understanding the space charge profiles or electrostatic potential distribution is of crucial importance for the design and operation of devices. Here we quantify the excess charge from the phase image utilizing the off-axis electron beam holography on AlN deposited on Pt/HfO2/Si (001) by atomic layer epitaxy. Considering the film thickness of ~ 15.6 nm and a phase change of 1.4 rad, the estimated mean inner potential turns out to be 15.9 V with respect to the film, which mostly due to the accumulation of charge.

Graphical Abstract