<p>This study explores the synthesis of Bismuth Telluride nanoparticles on silicon wafers via spark ablation using metal targets, avoiding toxic or costly precursors. Conducted at room temperature with a direct current arc and an inert gas atmosphere, the process prevents oxidation. The influence of voltage (0.5 kV, 1.0 kV, 1.5 kV), current (3 mA, 6 mA, 10 mA), and gas flow on particle size and distribution was investigated. Optimal conditions were achieved at a gas flow rate of <InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="43579_2025_742_Article_IEq1.gif" Format="GIF" Height="17" Rendition="HTML" Resolution="72" Type="Linedraw" Width="83" /> </InlineMediaObject> <EquationSource Format="TEX">\(2.5\,\hbox {L min}^{-1}\)</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mn>2.5</mn> <mspace width="0.166667em" /> <mtext>L</mtext> <mspace width="0.333333em" /> <msup> <mtext>min</mtext> <mrow> <mo>-</mo> <mn>1</mn> </mrow> </msup> </mrow> </math></EquationSource> </InlineEquation>, yielding particles sized 10 to 25 nm with a mean diameter of <InlineEquation ID="IEq2"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="43579_2025_742_Article_IEq2.gif" Format="GIF" Height="14" Rendition="HTML" Resolution="72" Type="Linedraw" Width="46" /> </InlineMediaObject> <EquationSource Format="TEX">\(17 \pm 3\)</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mn>17</mn> <mo>±</mo> <mn>3</mn> </mrow> </math></EquationSource> </InlineEquation> nm, demonstrating tunable synthesis suitable for targeted applications.</p> Graphic abstract <p></p>

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Optimization of bismuth telluride nanoparticles synthesized via spark ablation

  • Eliane Bsaibess,
  • Joumana El-Rifai,
  • Meriem Chettab,
  • Mustapha Zaghrioui,
  • Stavros Christopoulos,
  • Amna Yusuf,
  • Hamed Alawa,
  • Ahmed Slimani,
  • Valerie Laux-Le Guyon

摘要

This study explores the synthesis of Bismuth Telluride nanoparticles on silicon wafers via spark ablation using metal targets, avoiding toxic or costly precursors. Conducted at room temperature with a direct current arc and an inert gas atmosphere, the process prevents oxidation. The influence of voltage (0.5 kV, 1.0 kV, 1.5 kV), current (3 mA, 6 mA, 10 mA), and gas flow on particle size and distribution was investigated. Optimal conditions were achieved at a gas flow rate of \(2.5\,\hbox {L min}^{-1}\) 2.5 L min - 1 , yielding particles sized 10 to 25 nm with a mean diameter of \(17 \pm 3\) 17 ± 3 nm, demonstrating tunable synthesis suitable for targeted applications.

Graphic abstract