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<p>This work reports the role of different metal bottom electrodes such as Tungsten (W), Titanium/Ruthenium (Ti/Ru), and Scandium (Sc) on the Ferroelectric Switching of sub-100-nm Al<sub>1-x</sub>Sc<sub>x</sub>N thin films deposited <i>via</i> reactive co-sputtering techniques. The impact of leakage current on the ferroelectric behavior in these Al<sub>1-x</sub>Sc<sub>x</sub>N thin films is investigated in the metal–insulator–metal (MIM) configuration. Ferroelectric characteristics have been investigated through the Positive-Up-Negative-Down (PUND) techniques accounting for leakage current in reporting the ‘true’ remnant polarization (P<sub>r</sub>) values in these III–V nitride thin films. The film microstructures have been investigated using TEM analysis.</p> Graphical abstract <p></p>

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Impact of electrodes and interfaces on ferroelectric switching of Al1-xScxN

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年4月7日

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  • Vamshi Kiran Gogi,
  • Christopher Chae,
  • Jinwoo Hwang,
  • Rashmi Jha

摘要

This work reports the role of different metal bottom electrodes such as Tungsten (W), Titanium/Ruthenium (Ti/Ru), and Scandium (Sc) on the Ferroelectric Switching of sub-100-nm Al1-xScxN thin films deposited via reactive co-sputtering techniques. The impact of leakage current on the ferroelectric behavior in these Al1-xScxN thin films is investigated in the metal–insulator–metal (MIM) configuration. Ferroelectric characteristics have been investigated through the Positive-Up-Negative-Down (PUND) techniques accounting for leakage current in reporting the ‘true’ remnant polarization (Pr) values in these III–V nitride thin films. The film microstructures have been investigated using TEM analysis.

Graphical abstract