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<p>Vertical NAND FLASH has replaced NOR FLASH in wireless digital markets, due to lower cost and higher packing density. However, the speed of NAND FLASH is still behind DRAM and SRAM in computing tools, caused by the dielectric trapping, and tunneling processes. In this report, we demonstrate an ultra-high speed Photonic Vertical NAND FLASH with multiple VCSELs (vertical cavity surface emitting laser), which may outperform traditional NAND FLASH due to lower operating voltages and significantly faster nonvolatile memory operations. The new capability of integrated arrays of VCSELs with the high speed vertical photonic NAND FLASH for lasing and nonvolatile data storage can be achieved.</p> Graphical abstract <p></p>

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Ultra-high speed photonic vertical NAND FLASH and novel integrated vertical cavity surface emitting lasers (VCSELs)

  • 期刊论文

  • 发表日期：

    2025年4月21日

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  • James N. Pan

摘要

Vertical NAND FLASH has replaced NOR FLASH in wireless digital markets, due to lower cost and higher packing density. However, the speed of NAND FLASH is still behind DRAM and SRAM in computing tools, caused by the dielectric trapping, and tunneling processes. In this report, we demonstrate an ultra-high speed Photonic Vertical NAND FLASH with multiple VCSELs (vertical cavity surface emitting laser), which may outperform traditional NAND FLASH due to lower operating voltages and significantly faster nonvolatile memory operations. The new capability of integrated arrays of VCSELs with the high speed vertical photonic NAND FLASH for lasing and nonvolatile data storage can be achieved.

Graphical abstract