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<p>We investigate ion beam synthesized Germanium nanoparticles in PECVD amorphous Si<sub>3</sub>N<sub>4</sub> using complementary characterization techniques. Our results show a mix of amorphous and crystalline environments, influenced by implantation fluence and annealing temperatures. We compare these nanoparticles in various Silicon-based matrices, highlighting the matrix effect on atomic structure and size. Notably, nanoparticles in PECVD Si<sub>3</sub>N<sub>4</sub> differ in size and structure from those in SiO<sub>2</sub>, SiO<sub>1.67</sub>N<sub>0.14</sub>, and LPCVD Si<sub>3</sub>N<sub>4</sub>. Generally, Germanium implantation in nitride matrices produces smaller, more disordered structures. This study demonstrates that nanoparticle size and structure can be controlled through matrix selection for tailored properties.</p> Graphical abstract <p></p>

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Impact of size on the structure of Ge nanoparticles embedded in PECVD Si3N4: Insights from ion implantation and thermal annealing

  • 期刊论文

  • 发表日期：

    2025年3月4日

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  • S. Mirzaei,
  • F. Kremer,
  • R. Feng,
  • C. J. Glover,
  • D. J. Sprouster

摘要

We investigate ion beam synthesized Germanium nanoparticles in PECVD amorphous Si3N4 using complementary characterization techniques. Our results show a mix of amorphous and crystalline environments, influenced by implantation fluence and annealing temperatures. We compare these nanoparticles in various Silicon-based matrices, highlighting the matrix effect on atomic structure and size. Notably, nanoparticles in PECVD Si3N4 differ in size and structure from those in SiO2, SiO1.67N0.14, and LPCVD Si3N4. Generally, Germanium implantation in nitride matrices produces smaller, more disordered structures. This study demonstrates that nanoparticle size and structure can be controlled through matrix selection for tailored properties.

Graphical abstract