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Van der Waals magnetic materials for current-induced control toward spintronic applications

  • Jeongchun Ryu,
  • Shivam Nitin Kajale,
  • Deblina Sarkar

摘要

Spintronics, leveraging electron spin for information processing, promises substantial advancements in energy-efficient computing. Van der Waals (vdW) magnetic materials, with their unique-layered structures and exceptional magnetic properties, have emerged as pivotal components in this field. This report explores the current-based control of vdW magnets, focusing on the spin–orbit torque (SOT) mechanism, which is crucial for spintronic applications. Key studies on Fe3GaTe2/Pt and Fe3GaTe2/WTe2 heterostructures are highlighted, demonstrating efficient SOT switching at room temperature. The advantages of vdW magnets for SOT switching, including high spin-torque efficiencies and superior interface quality, are discussed. The report also examines future directions, such as wafer-scale growth techniques, materials design for enhanced Curie temperatures (Tc), and the development of magneto tunnel junctions using all-vdW materials. These advancements underscore the potential of vdW magnetic materials in developing scalable, high-performance spintronic devices, paving the way for significant breakthroughs in energy-efficient computing.

Graphical abstract